PART |
Description |
Maker |
UPD4265805G5-A50-7JD UPD4264805G5-A50-7JD UPD42658 |
18-Mbit QDR-II SRAM 2-Word Burst Architecture 1-Mbit (64K x 16) Static RAM 1M x 4 Static RAM x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM 4-Mbit (256K x 16) Static RAM
|
NEC TOKIN, Corp.
|
CAT34WC02W-TE13 CAT34WC02Y-TE13 CAT34WC02Y-1.8TE13 |
MoBL® 2-Mbit (256K x 8) Static RAM MoBL® 8-Mbit (512K x 16) Static RAM MoBL2 4-Mb (256K x 16) Static RAM MoBL® 4-Mbit (256K x 16) Static RAM 5V, 3.3V, ISR High-Performance CPLDs Licorice Board (CY22150 Candy Board) EEPROM MoBL® 4-Mbit (512K x 8) Static RAM EEPROM MoBL2™ 4-Mb (256K x 16) Static RAM EEPROM MoBL® 2-Mbit (128K x 16) Static RAM 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
|
Bourns, Inc. 3M Company
|
CY62157ESL-45ZSXI CY62157ESL-13 |
8-Mbit (512 K x 16) Static RAM
|
Cypress Semiconductor
|
CY62156ESL-45BVXI |
8-Mbit (512 K x 16) Static RAM
|
Cypress Semiconductor
|
CY62157EV18 |
8-Mbit (512 K x 16) Static RAM
|
Cypress Semiconductor
|
CY62148ESL-55ZAXA CY62148ESL-55ZAXI CY62148ESL10 |
4-Mbit (512 K × 8) Static RAM
|
Cypress Semiconductor
|
CY62148ELL-45ZSXA CY62148ELL-45ZSXI CY62148ELL-55S |
4-Mbit (512 K ? 8) Static RAM 4-Mbit (512 K × 8) Static RAM
|
Cypress Semiconductor
|
BB4EG BB4GK BB4KLX BB4JKX BB4DF BB4NPX |
MoBL® 8-Mbit (512K x 16) Static RAM MoBL® 32-Mbit (2M x 16) Static RAM MoBL® 16-Mbit (1M x 16) Static RAM "SHIELDING BAG 16 X 18"" Inhalt pro Packung: 10 Stk. “屏蔽袋16 X 18”,“Inhalt亲Packung0沙头角。
|
ON Semiconductor
|
AM41DL6408G |
64 Mbit (8 M x 8-Bit/4 M x 16-Bit) CMOS and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM (Prelimin From old datasheet system
|
AMD Inc
|
CYK001M16ZCCAU-70BAI CYK001M16ZCCA CYK001M16ZCCAU- |
1M X 16 PSEUDO STATIC RAM, 55 ns, PBGA48 6 X 8 MM, 1.20 MM HEIGHT, FBGA-48 1M X 16 PSEUDO STATIC RAM, 70 ns, PBGA48 6 X 8 MM, 1.20 MM HEIGHT, FBGA-48 16-Mbit (1M x 16) Pseudo Static RAM CAP 1000PF 1000V 5% NP0(C0G) SMD-1812 TR-7 PLATED-NI/SN 1M X 16 PSEUDO STATIC RAM, 70 ns, PBGA48
|
CYPRESS[Cypress Semiconductor] Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
ST1335 ST1355-CW4 ST1335-BD10 ST1335-BD15 ST1335-B |
5-CONTACT MEMORY CARD IC 272 BIT EEPROM WITH ADVANCED SECURITY MECHANISMS 5V, 3.3V, ISR High-Performance CPLDs NX2LP DEVELOPMENT KIT KIT DEV MOBL-USB FX2LP18 MoBL® 4-Mbit (256K x 16) Static RAM MoBL® 1-Mbit (64K x 16) Static RAM MoBL® 1 Mbit (128K x 8) Static RAM MoBL® 2-Mbit (128K x 16) Static RAM (ST1335/13361355) 5-Contact Memory Card IC 272-bit EEPROM with Advanced Security Mechanisms MoBL® 1-Mbit (64K x 16) Static RAM EEPROM 5V, 3.3V, ISR™ High-Performance CPLDs EEPROM MoBL® 4-Mbit (256K x 16) Static RAM EEPROM 5-Contact Memory Card IC 272-bit EEPROM with Advanced Security Mechanisms 5,联系记忆卡IC 272位具有高级安全机制的EEPROM
|
SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 ST Microelectronics STMicroelectronics N.V.
|
CY7C1041CV33-12ZSXE CY7C1041CV3308 CY7C1041CV33-10 |
4-Mbit (256K x 16) Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 3.0 to 3.6 V; 256K X 16 STANDARD SRAM, 10 ns, PDSO44 4-Mbit (256K x 16) Static RAM
|
Cypress Semiconductor, Corp.
|